SOLID-STATE IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of reducing dark current due to a stress adjacent to an interface in an element separating portion and capable of ensuring a high sensitivity with minute pixels.SOLUTION: The solid-state imaging device has plural pixels 12 formed on a silicon substrate. A photoelectric converting section 10 constituting each pixel is separated by an element separation part 13. The photoelectric converting section includes a buried photodiode having a high density impurity surface layer 25 formed over the surface of a substrate. A high density impurity embedded layer 26 is formed in an interface area between the photoelectric converting section and the element separation part. Each pixel includes a floating diffusion layer 14 and a transfer transistor 15. The transfer transistor is disposed between the element separation parts. The high density impurity embedded layer is formed between a channel of the transfer transistor and the element separation part. The crystal orientation of the channel of the transfer transistor is formed in a direction identical to<00-1>.