发明名称 |
Method for fabricating a micro-electronic device equipped with semi-conductor zones on an insulator with a horizontal GE concentration gradient |
摘要 |
A manufacturing method of a microelectronic device including at least one semi-conductor zone which rests on a support and which exhibits a germanium concentration gradient in a direction parallel to the principal pane of the support.
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申请公布号 |
US8501596(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US20090560867 |
申请日期 |
2009.09.16 |
申请人 |
VINCENT BENJAMIN;DESTEFANIS VINCENT;COMMISSARIAT A L'ENERGIE ATMOIQUE |
发明人 |
VINCENT BENJAMIN;DESTEFANIS VINCENT |
分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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