METHOD FOR MANUFACTURING DOUBLE-LAYER POLYSILICON GATE
摘要
The invention discloses a method for manufacturing a dual-layer polysilicon gate. The method includes: depositing silicon nitride on silicon oxide of an integrated circuit to be processed; performing anisotropic etching on the silicon nitride to form sidewalls of silicon nitride on sidewalls of a first layer of polysilicon gate of the integrated circuit to be processed; manufacturing a second layer of polysilicon gate; and rinsing the sidewalls of silicon nitride.
申请公布号
US2013183821(A1)
申请公布日期
2013.07.18
申请号
US201213729338
申请日期
2012.12.28
申请人
PEKING UNIVERSITY FOUNDER GROUP CO., LTD.;FOUNDER MICROELECTRONICS INTERNATIONAL CO., LTD.;FOUNDER MICROELECTRONICS INTERNATIONAL CO., LTD.;PEKING UNIVERSITY FOUNDER GROUP CO., LTD.