发明名称 Infrared image sensor
摘要 An image sensor comprises a photoelectric conversion element receiving light to accumulate photocharges, and a wavelength conversion layer formed above the photoelectric conversion element to convert light within a first wavelength band into light within a second wavelength band shorter than the first wavelength band and supply the converted light to the photoelectric conversion element.
申请公布号 US8487259(B2) 申请公布日期 2013.07.16
申请号 US20100882531 申请日期 2010.09.15
申请人 CHO KYOUNG LAE;CHO HYUN MIN;SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO KYOUNG LAE;CHO HYUN MIN
分类号 G01J5/20;G01T1/24 主分类号 G01J5/20
代理机构 代理人
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