| 发明名称 |
Semiconductor Device And Bump Formation Process |
| 摘要 |
A semiconductor device includes a solder bump overlying and electrically connected to a pad region, and a metal cap layer formed on at least a portion of the solder bump. The metal cap layer has a melting temperature greater than the melting temperature of the solder bump.
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| 申请公布号 |
US2013175683(A1) |
申请公布日期 |
2013.07.11 |
| 申请号 |
US201313787670 |
申请日期 |
2013.03.06 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSIAO YI-LI;YU CHEN-HUA;JENG SHIN-PUU;TUNG CHIH-HANG;WEI CHENG-CHANG |
| 分类号 |
H01L21/768;H01L23/498 |
主分类号 |
H01L21/768 |
| 代理机构 |
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