MIS SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To stabilize a threshold voltage in a MIS semiconductor device having a gate insulation film composed of ZrON.SOLUTION: A MIS semiconductor device manufacturing method comprises forming a gate insulation film 11 composed of ZrONon a semiconductor layer 10 by an ECR sputtering method (Figure 2(b)). The sputtering is performed in a mixed gas in which nitrogen and oxygen are mixed with an argon gas by using a metal target of Zr. A flow rate of the argon gas is 15-30 sccm, a flow rate of the oxygen gas is 0.1-3.0 sccm and a flow rate of the nitrogen gas is 4.3-17.0 sccm. Further, a ratio of the oxygen gas flow rate to the nitrogen gas flow rate is 0.012-0.360.