OTP MEMORY UNIT AND MANUFACTURING METHOD THEREOF

摘要

A one time programmable (OTP) memory unit and manufacturing method thereof, the OTP memory unit comprising: a semiconductor substrate; a gate dielectric layer located on the semiconductor substrate; a gate electrode (G) located on the gate dielectric layer; a silicon nitride side wall structure located around the gate electrode; a side wall dielectric layer located between the gate electrode and the silicon nitride side wall structure; and a source electrode (S) and a drain electrode (D) located at the two sides of the gate electrode. The OTP memory unit does not store thermal electrons in a floating gate, but utilizes the side wall structure to capture and store the electrons. As a result, the data can be stored and read without an additional gate tube or coupling capacitor. Compared to traditional floating gate OTP, the OTP memory unit occupies a smaller area, thus improving the memory density of a memorizer. Furthermore, the manufacturing method thereof is compatible with standard logic procedure and has a simple process, thus greatly saving manufacturing cost.