| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the ferroelectric characteristics of a ferroelectric film of a ferroelectric capacitor from deteriorating in a manufacturing method for a semiconductor device. <P>SOLUTION: A manufacturing method for a semiconductor device comprises the steps of: forming a conductive film 31 on a semiconductor substrate 10; forming a first ferroelectric film 32 on the conductive film 31; forming a second amorphous ferroelectric film 33 on the first ferroelectric film 32; forming a transition metal oxide material film 34 including ruthenium on the second ferroelectric film 33; forming a first conductive oxide metal film 35 on a ferroelectric material film 34 without exposing the ferroelectric material film 34 to the atmosphere; crystallizing the second ferroelectric film 33 by annealing; and forming a ferroelectric capacitor Q by patterning the first conductive oxide metal film 35, the first ferroelectric film 32, the second ferroelectric film 33, and the conductive film 31. <P>COPYRIGHT: (C)2013,JPO&INPIT |
