| 摘要 |
<p>A preparation method for a glass substrate thin-film sputtering target material, comprising: weighing an alloy material for use in preparing the glass substrate thin-film sputtering target material; adding the weighed alloy material into a plasma compaction molding-sintering cavity for sintering, acquiring a target material sintered body, where the sintering temperature is between 500°C and 1600°C, and where the sintering time is between 5 and 20 minutes; and post-processing the target material sintered body acquired by sintering. Also provided is the glass substrate thin-film sputtering target material. Because a rapid sintering method of plasma compaction molding is employed, thus the quality of the target material is improved and the time for preparing the target material is reduced.</p> |
