SENSOR WITH FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THIS TRANSISTOR

摘要

Field effect transistor (1) that can be used as detector comprising: a semiconducting substrate (2) exhibiting two zones doped with electric charge carriers forming respectively a source zone (3) and a drain zone (4); a dielectric layer disposed above the semiconducting substrate (2) between the source (3) and the drain (4) and forming the gate dielectric (9) of the field effect transistor (1); a gate (11) consisting of a reference electrode (8) and of a conducting solution (10), the solution (10) being in contact with the gate dielectric (9); is characterized in that the gate dielectric (9) consists of a layer of lipids (13) in direct contact with the semiconducting layer (2). The invention also relates to a method of fabricating such a field effect transistor (1).