| 摘要 |
PURPOSE: A single crystal ingot growing apparatus is provided to significantly reduce process time by effectively cooling residual materials created during a single crystal growth process. CONSTITUTION: An exhaust line(170) comprises a fluid inlet hole. A water tank(184) is located on the exhaust line. An air injection hole(182) is located on one side of the water tank. An air injection nozzle(186) connected to the exhaust line is located on the other side of the water tank. The air flow rate inside the exhaust line is 1.5 to 15 m/s. |
