| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a crystal solar cell manufacturing method which enables a profile having a required p-type impurity concentration to be formed by implanting B ion selectively extracted from a source gas into one principal surface side of a crystal substrate. <P>SOLUTION: A manufacturing method of a crystal solar cell 100 including a light-receiving surface receiving light and a crystal substrate 101 exhibiting a photoelectric conversion function between itself a rear face opposed to the light-receiving surface, comprises: arranging the crystal substrate in a vacuum chamber in a reduced-pressure atmosphere and introducing a source gas containing B<SB POS="POST">2</SB>H<SB POS="POST">6</SB>molecules into the vacuum chamber; plasma exciting the source gas to selectively extract ionized B ion; and implanting the B ion into one principal surface 101b side of the crystal substrate 100 to form a P-type semiconductor layer 102. <P>COPYRIGHT: (C)2013,JPO&INPIT |
