发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature.
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申请公布号 |
US2013122720(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201213713049 |
申请日期 |
2012.12.13 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC.;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
TAKEBAYASHI YUJI;YAMAZAKI HIROHISA;HORII SADAYOSHI;ITATANI HIDEHARU;OGAWA ARITO |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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