MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To prevent undesired reaction from occurring in a thin film after substrate processing due to waste heat, stabilize a crystal structure of the thin film, and reduce the damage of a transfer robot and the likes.

SOLUTION: A manufacturing method of a semiconductor device includes the steps of: placing a substrate on a substrate support part provided at a reaction vessel having multiple processing regions; supplying a first gas and a second gas in a plasma state to the first processing region and the second processing region respectively while heating the substrate to a predetermined temperature and causing the substrate to pass through the first processing region and the second processing region to form a thin film; stopping the supply of the first gas and the second gas to the reaction vessel and supplying an inactive gas to the reaction vessel to cool the substrate that has been processed; and carrying out the substrate that has been processed to the exterior of the reaction vessel.

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