| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to form a sub hole having a negative slope by an over etch process and to prevent crystal defects in an SPE(Solid Phase Epitaxy) growth process. CONSTITUTION: A gate pattern(13) is formed on a substrate(11). A gate spacer(14) is formed along the stepped part of the whole structure including the gate pattern. An interlayer insulating layer(15) for filling the space between the gate patterns is formed on the gate spacer. The interlayer insulating layer is selectively etched to form a contact hole for opening the gap between the gate patterns. A main etch process for selectively removing the gate spacer of the lower part of the contact hole is performed. An over etch process is carried out to form a sub hole(18) of a preset depth in the substrate.
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