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发明名称
Method for etching substrate
摘要
One or more embodiments relate to a method of making a semiconductor structure, comprising: forming a patterned metallic layer over a semiconductor substrate; forming a second layer over the patterned metallic layer; and etching the substrate.
申请公布号
US2013109171(A1)
申请公布日期
2013.05.02
申请号
US201113282491
申请日期
2011.10.27
申请人
ENGELHARDT MANFRED
发明人
ENGELHARDT MANFRED
分类号
H01L21/768
主分类号
H01L21/768
代理机构
代理人
主权项
地址
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