发明名称 |
Field assisted switching of a magnetic memory element |
摘要 |
Method and apparatus for writing data to a magnetic memory element, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a magnetic memory element to initiate magnetic precession of the element to a desired magnetic state. A flow of a field assist current is subsequently initiated adjacent the magnetic memory element during continued application of the write current to induce a magnetic field upon the element. The field assist current persists after the write current is terminated to provide field assisted precession to the desired magnetic state. |
申请公布号 |
US8422277(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US20100939751 |
申请日期 |
2010.11.04 |
申请人 |
CAO XIN;XI HAIWEN;ZHU WENZHONG;LAMBERTON ROBERT;GAO KAIZHONG;SEAGATE TECHNOLOGY LLC |
发明人 |
CAO XIN;XI HAIWEN;ZHU WENZHONG;LAMBERTON ROBERT;GAO KAIZHONG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|