发明名称 |
MULTI-GATE FIELD-EFFECT TRANSISTORS WITH VARIABLE FIN HEIGHTS |
摘要 |
Multi-gate devices and methods of their fabrication are disclosed. A multi-gate device can include a gate structure and a plurality of fins. The gate structure envelops a plurality of surfaces of the fins, which are directly on a substrate that is composed of a semiconducting material. Each of the fins provides a channel between a respective source and a respective drain, is composed of the semiconducting material and is doped. A first fin of the plurality of fins has a first height that is different from a second height of a second fin of the plurality of fins such that drive currents of the first and second fins are different. Further, the first and second fins form a respective cohesive structure of the semiconducting material with the substrate. In addition, surfaces of the substrate that border the fins are disposed at a same vertical position.
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申请公布号 |
US2013082329(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
US201113251815 |
申请日期 |
2011.10.03 |
申请人 |
CHEN HSUEH-CHUNG;FAN SU CHEN;STANDAERT THEODORUS E.;YEH CHUN-CHEN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN HSUEH-CHUNG;FAN SU CHEN;STANDAERT THEODORUS E.;YEH CHUN-CHEN |
分类号 |
H01L27/088;H01L21/28;H01L29/78 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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