| 摘要 |
<p>PURPOSE: A saddle-fin type transistor and a method for forming the same are provided to prevent the generation of short-circuit between a landing plug contact and a recess gate in an element isolation film by forming the landing plug contact into an elevated shape. CONSTITUTION: The active region(102) of a semiconductor substrate(100) is defined by an element isolation film(106). The active region is formed into a saddle-fin type structure. The saddle-fin type structure is protruded to be higher than the element isolation film. A gate(132) includes a poly silicone pattern(126), a conductive pattern(128), and a hard mask layer pattern(130). A gate spacer(134) is formed on the sidewall of the gate.</p> |
