发明名称 |
POWER SEMICONDUCTOR MODULE |
摘要 |
A transistor chip formed from a wide band gap semiconductor, on which transistor elements for an upper arm are formed is mounted on a front surface of an insulating substrate. A transistor chip formed from a wide band gap semiconductor, on which transistor elements for a lower arm are formed is mounted on a rear surface of the insulating substrate.
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申请公布号 |
US2013056755(A1) |
申请公布日期 |
2013.03.07 |
申请号 |
US201013698901 |
申请日期 |
2010.05.21 |
申请人 |
HATAI AKIRA;TAMURA SHIZURI;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
HATAI AKIRA;TAMURA SHIZURI |
分类号 |
H01L29/161 |
主分类号 |
H01L29/161 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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