发明名称 |
Flip chip bump structure and fabrication method |
摘要 |
A method includes forming a patterned buildup layer on a first surface of a dielectric layer, the patterned buildup layer including a patterned buildup layer opening exposing a trace coupled to the dielectric layer. A conductor layer is flash plated on the patterned buildup layer and within the patterned buildup layer opening. The patterned buildup layer opening is filled with a blanket conductive filler layer. The blanket conductive filler layer and the conductor layer are planarized to form a flip chip bump. |
申请公布号 |
US8390116(B1) |
申请公布日期 |
2013.03.05 |
申请号 |
US201113065298 |
申请日期 |
2011.03.18 |
申请人 |
HUEMOELLER RONALD PATRICK;ST. AMAND ROGER D.;DARVEAUX ROBERT FRANCIS;AMKOR TECHNOLOGY, INC. |
发明人 |
HUEMOELLER RONALD PATRICK;ST. AMAND ROGER D.;DARVEAUX ROBERT FRANCIS |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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