发明名称 Flip chip bump structure and fabrication method
摘要 A method includes forming a patterned buildup layer on a first surface of a dielectric layer, the patterned buildup layer including a patterned buildup layer opening exposing a trace coupled to the dielectric layer. A conductor layer is flash plated on the patterned buildup layer and within the patterned buildup layer opening. The patterned buildup layer opening is filled with a blanket conductive filler layer. The blanket conductive filler layer and the conductor layer are planarized to form a flip chip bump.
申请公布号 US8390116(B1) 申请公布日期 2013.03.05
申请号 US201113065298 申请日期 2011.03.18
申请人 HUEMOELLER RONALD PATRICK;ST. AMAND ROGER D.;DARVEAUX ROBERT FRANCIS;AMKOR TECHNOLOGY, INC. 发明人 HUEMOELLER RONALD PATRICK;ST. AMAND ROGER D.;DARVEAUX ROBERT FRANCIS
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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