| 摘要 |
FIELD: physics.SUBSTANCE: invention provides a method of making a solar cell in plasma treatment conditions from a silicon wafer, or a p-type silicon wafer, with an n-type coating, involving a step of etching a parasitic emitter on the back side of the solar cell, photomasks of the collar cells with a PERL structure, wafers having a phosphorous-containing vitreous coating, or etching wafers for surface modification, including the back side, or for correcting the silicon wafers having cracks, with an etching gas containing undiluted carbonyl fluoride, undiluted fluorine or mixtures of fluorine and nitrogen mixtures, fluorine and argon mixtures, fluorine, nitrogen and argon mixtures, carbonyl fluoride and oxygen mixtures, mixtures of carbonyl fluoride and an inert gas selected from nitrogen, helium and argon, or mixtures of carbonyl fluoride with oxygen and an inert gas selected from nitrogen, helium and argon. The invention also provides a solar cell made using the method described above and a method of making flat panel displays.EFFECT: avoiding greenhouse effect and depletion of the ozone layer.13 cl, 6 ex, 1 tbl |
