| 摘要 |
PURPOSE: An electrostatic discharge(ESD) protection device is provided to secure a high holding voltage by controlling the length of an inserted floating diffusion region. CONSTITUTION: An N+ floating diffusion region(223) is formed in an N well(220). The N well is formed on the semiconductor substrate. The N+ floating diffusion region is doped with higher density than the doping density of the N well. A P+ floating diffusion region(233) is formed in a P well(230). The P well is contacted with the N well. The P+ floating diffusion region is doped with higher density than the doping density of the P well. [Reference numerals] (210) Semiconductor substrate; (240) Anode; (250) Cathode |
