| 发明名称 |
BULK FINFET WITH UNIFORM HEIGHT AND BOTTOM ISOLATION |
| 摘要 |
<p>A fin Field Effect Transistor (finFET), an array of finFETs, and methods of production thereof. The finFETs are provided on an insulating region, which may optionally contain dopants. Further, the finFETs are optionally capped with a pad. The finFETs provided in an array are of uniform height.</p> |
| 申请公布号 |
WO2013006612(A1) |
申请公布日期 |
2013.01.10 |
| 申请号 |
WO2012US45389 |
申请日期 |
2012.07.03 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION (YT);CHENG, KANGGUO;DORIS, BRUCE, B. |
发明人 |
CHENG, KANGGUO;DORIS, BRUCE, B. |
| 分类号 |
H01L29/732 |
主分类号 |
H01L29/732 |
| 代理机构 |
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代理人 |
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| 主权项 |
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