METHOD FOR PRODUCING AN SOI WAFER

摘要

The present invention is a method for manufacturing an SOI wafer that has an SOI layer formed on a buried insulator layer and that is to be used in a device fabrication process or an inspection process including a process of controlling a position of the SOI wafer on the basis of intensity of reflected light from the SOI wafer when the SOI wafer is irradiated with light having a wavelength ». The method comprises the steps of: designing a thickness of the buried insulator layer of the SOI wafer on the basis of the wavelength » of the light for use in the process of controlling the position that is to be implemented on the SOI wafer after manufacturing; and fabricating the SOI wafer having the SOI layer formed on the buried insulator layer having the designed thickness. As a result, there is provided a method for designing and manufacturing an SOI wafer that enables inhibition of variation in the reflection rate of light due to variation in the SOI layer thickness to improve precision of the position control of the SOI wafer and enables cost reduction by sharing position control mechanisms used in the device fabrication process or the inspection process using a bulk silicon wafer.