| 摘要 |
<P>PROBLEM TO BE SOLVED: To restrict degradation in photoelectric conversion film. <P>SOLUTION: A solid state image sensor comprises a plurality of pixels arranged in matrix form and a vertical drive unit which outputs a drive signal for each pixel line. The pixels each include a pixel electrode formed separately from the other pixels on a silicon substrate, a photoelectric conversion film formed on the pixel electrode, and a counter electrode formed on the photoelectric conversion film. The counter electrode is electrically separated from adjacent other counter electrodes. The vertical drive unit applies electric potential to each pixel line differing in at least read timing which is in an opposite direction to the electric potential applied to the photoelectric conversion film during pixel exposure at prescribed timing other than the pixel exposure period. The present disclosure can be applied to electronic equipment such as a digital still camera, for example. <P>COPYRIGHT: (C)2013,JPO&INPIT |
