发明名称 Resist applying and developing method, resist film processing unit, and resist applying and developing apparatus comprising the unit
摘要 A resist film processing unit is disclosed that can improve an etching resistance of a resist film formed on a substrate. The resist film processing unit includes a light source to irradiate an ultraviolet light on a resist film patterned by a development process, a heating part configured to heat the resist film irradiated with the ultraviolet light by the light source, and a solvent processing unit configured to expose the resist film to a solvent gas including a solvent that contains a benzene ring, during or after heating of the resist film by the heating part.
申请公布号 US8343714(B2) 申请公布日期 2013.01.01
申请号 US20100762666 申请日期 2010.04.19
申请人 TOKYO ELECTRON LIMITED;SHIRAISHI GOUSUKE;INATOMI YUICHIRO 发明人 SHIRAISHI GOUSUKE;INATOMI YUICHIRO
分类号 G03F7/00;G03F7/004;G03F7/40 主分类号 G03F7/00
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