发明名称 |
Resist applying and developing method, resist film processing unit, and resist applying and developing apparatus comprising the unit |
摘要 |
A resist film processing unit is disclosed that can improve an etching resistance of a resist film formed on a substrate. The resist film processing unit includes a light source to irradiate an ultraviolet light on a resist film patterned by a development process, a heating part configured to heat the resist film irradiated with the ultraviolet light by the light source, and a solvent processing unit configured to expose the resist film to a solvent gas including a solvent that contains a benzene ring, during or after heating of the resist film by the heating part.
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申请公布号 |
US8343714(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20100762666 |
申请日期 |
2010.04.19 |
申请人 |
TOKYO ELECTRON LIMITED;SHIRAISHI GOUSUKE;INATOMI YUICHIRO |
发明人 |
SHIRAISHI GOUSUKE;INATOMI YUICHIRO |
分类号 |
G03F7/00;G03F7/004;G03F7/40 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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