发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device that dispenses with data saving and restoration between a volatile storage device and a nonvolatile storage device in a configuration adapted to stop and resume supplying a supply voltage. <P>SOLUTION: As for the nonvolatile semiconductor storage device, the volatile storage device and the nonvolatile storage device are provided inseparately. Specifically, the semiconductor storage device is configured to hold data in a data holding section connected to a transistor having an oxide semiconductor in a semiconductor layer and to a capacitive element. A potential held in the data holding section is controlled by a data potential holding circuit capable of outputting the data without leaking a charge and by a data potential control circuit capable of controlling the potential held in the data holding section without leaking a charge by means of a capacitive coupling via the capacitive element. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012257206(A) 申请公布日期 2012.12.27
申请号 JP20120099378 申请日期 2012.04.25
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YONEDA SEIICHI;KOBAYASHI HIDETOMO
分类号 H03K3/356;H01L21/8234;H01L21/8242;H01L21/8246;H01L27/06;H01L27/08;H01L27/088;H01L27/10;H01L27/105;H01L27/108;H01L29/786 主分类号 H03K3/356
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