发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device that dispenses with data saving and restoration between a volatile storage device and a nonvolatile storage device in a configuration adapted to stop and resume supplying a supply voltage. <P>SOLUTION: As for the nonvolatile semiconductor storage device, the volatile storage device and the nonvolatile storage device are provided inseparately. Specifically, the semiconductor storage device is configured to hold data in a data holding section connected to a transistor having an oxide semiconductor in a semiconductor layer and to a capacitive element. A potential held in the data holding section is controlled by a data potential holding circuit capable of outputting the data without leaking a charge and by a data potential control circuit capable of controlling the potential held in the data holding section without leaking a charge by means of a capacitive coupling via the capacitive element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012257206(A) |
申请公布日期 |
2012.12.27 |
申请号 |
JP20120099378 |
申请日期 |
2012.04.25 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YONEDA SEIICHI;KOBAYASHI HIDETOMO |
分类号 |
H03K3/356;H01L21/8234;H01L21/8242;H01L21/8246;H01L27/06;H01L27/08;H01L27/088;H01L27/10;H01L27/105;H01L27/108;H01L29/786 |
主分类号 |
H03K3/356 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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