| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent slurry from being remained by stopping a planarization process of a first insulating film before a first air-gap and a polysilicon film are exposed. CONSTITUTION: Gates are formed on the upper part of a semiconductor substrate(101). The gates include a stacked metal silicide layer(131). A first insulating film(115) is formed along the side wall of the gate. A second insulating film(137) is formed along the surface of the metal silicide layer. The second insulating film blocks an opening part between the gates.</p> |
