| 摘要 |
<P>PROBLEM TO BE SOLVED: To inhibit side etching of a float gate insulation film even when wet etching is used as etching for removing an unnecessary part of the insulation film. <P>SOLUTION: A semiconductor device comprises: a selection gate insulation film 172 arranged in adjacent to a floating gate insulation film 110; a selection gate electrode 170 arranged on the selection gate insulation film 172 with a lateral face connected to a first lateral face of the floating gate electrode 120 via a second insulation film 152; and an erasure gate electrode 180 connected to the floating gate electrode 120 via a third insulation film 160. A lower limit of the second insulation film 152 is located nearer to a surface of a semiconductor substrate 100 than a top face of the floating gate insulation film 110. A distance from the lower limit of the second insulation film 152 to the surface of the semiconductor substrate 100 is larger than a thickness of the selection gate insulation film 172. <P>COPYRIGHT: (C)2013,JPO&INPIT |
