| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to easily perform subsequent processes by reducing a stepped part between a peripheral circuit region and a cell region. CONSTITUTION: A semiconductor substrate(100) has an active region on an element isolation film(105). A gate line(115) separates the active region into a storage node connection region. An interlayer insulating film covers the semiconductor substrate formed on the gate line. A storage node contact is directly connected to the storage node connection region. A bit line is connected to a bit line connection region through the interlayer insulating film.
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