| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vertical light-emitting device that can improve light extraction efficiency and to provide a method of manufacturing the same. <P>SOLUTION: A vertical light-emitting device comprises: a support layer 70; a first electrode that is located on the support layer; a plurality of semiconductor layers that are located on the first electrode and include a p-type GaN layer 43 located on the first electrode, a light-emitting layer 42 located on the p-type GaN layer, and an n-type GaN layer 41 located on the light-emitting layer; an optical crystal layer that is located on the n-type GaN layer and is formed by a plurality of holes periodically arranged; and a second electrode that is located on the optical crystal layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
