AMORPHOUS OXIDE THIN FILM TRANSISTOR, FORMING METHOD THEREOF AND DISPLAY PANEL INCLUDING THE SAME

摘要

PURPOSE: An amorphous oxide thin film transistor, a formation method thereof, and a display panel including the same are provided to reduce unstable surface state and interface state of a transistor element by performing an annealing process before forming a semiconductor active layer. CONSTITUTION: A semiconductor active layer is comprised of an ohmic contact layer(5) and a channel layer(4). The channel layer is formed on a gate insulating layer(3). The channel layer is formed by sputtering of amorphous oxide material under the atmosphere containing oxygen. The ohmic contact layer is divided into two independent ohmic contact regions(51,52). The two independent ohmic contact regions respectively contact with a source electrode(61) and a drain electrode(62).