| 摘要 |
<p>PURPOSE: A semiconductor memory is provided to exponentially improve a charge maintaining property without the reduction of a diameter of a conductive corpuscle by increasing the potential of a second corpuscle layer. CONSTITUTION: A first corpuscle layer is formed on a first tunnel insulation layer(230) and includes a first conductive corpuscle. A second tunnel insulation layer(250) is formed on the first corpuscle layer. A second corpuscle layer is formed on the second tunnel insulation layer and includes a second conductive corpuscle. A third tunnel insulation layer(270) is formed on the second corpuscle layer. A third corpuscle layer(280) is formed on the third tunnel insulation layer and includes a third corpuscle. An average diameter of the second conductive corpuscle is larger than the average diameters of the first and third conductive corpuscles.</p> |
