Thin film memory device having a variable resistance

摘要

A thin film storage device includes a first electrode (3), a first variable resistance thin film (2), and a second electrode (1). The first electrode (3) is formed over a surface of a substrate (4). The first variable resistance thin film (2) is formed over a surface of the first electrode (3). The second electrode (1) is formed over a surface of the first variable resistance thin film (2). The first variable resistance thin film (2) comprises a material whose resistance in a bulk state changes in accordance with at least one of a lattice strain and a change of charge-order.