| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an MTJ element capable of not only reducing writing current but also having a large MR ratio. <P>SOLUTION: A magnetic tunnel junction element comprises a magnetization free layer, a magnetization fixed layer, a tunnel barrier layer arranged between the magnetization free layer and the magnetization fixed layer. The magnetization free layer includes a perpendicular magnetization free layer, an in-plane magnetization free layer arranged between the perpendicular magnetization free layer and the tunnel barrier layer, and a nonmagnetic intermediate layer arranged between the perpendicular magnetization free layer and the in-plane magnetization free layer. An easy magnetization direction of the perpendicular magnetization free layer is perpendicular to a film plane and an easy magnetization direction of the in-plane magnetization free layer is parallel to the film plane, and magnetization of the perpendicular magnetization free layer is directed in an in-plane direction by exchange coupling with the in-plane magnetization free layer via the nonmagnetic intermediate layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
