发明名称 MEMORY DEVICE, DISPLAY DEVICE EQUIPPED WITH MEMORY DEVICE, DRIVE METHOD FOR MEMORY DEVICE, AND DRIVE METHOD FOR DISPLAY DEVICE
摘要 A memory device can perform a first operation mode in which a discrete level is supplied to cause the memory cell to retain a logical level, and prevent unnecessary power consumption due to an operation of a power source which is unnecessary in the first operation mode. The memory device includes: a first power source (VDD) for supplying a first potential level; a second power source (VSS) for supplying a second potential level, a third power source (GVDD) for supplying a potential higher than a highest potential of discrete levels; and a fourth power source for supplying a potential lower than a lowest potential of the discrete levels, the first and second potential levels being used to supply the discrete levels, when the first operation is carried out, VDD, VSS, and GVDD being caused to be in operation and the fourth power source being stopped from being in operation.
申请公布号 US2012179923(A1) 申请公布日期 2012.07.12
申请号 US201013395739 申请日期 2010.03.18
申请人 SASAKI YASUSHI;MURAKAMI YUHICHIROH;FURUTA SHIGE;GYOUTEN SEIJIROU;NISHI SHUJI;SHARP KABUSHIKI KAISHA 发明人 SASAKI YASUSHI;MURAKAMI YUHICHIROH;FURUTA SHIGE;GYOUTEN SEIJIROU;NISHI SHUJI
分类号 G06F1/26 主分类号 G06F1/26
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