| 摘要 |
A multilayer piezoelectric device of the present invention includes a body 10 in which internal electrode layers 21 and 22 and piezoelectric ceramic layers 11 are alternately stacked, wherein the internal electrode layers 21 and 22 contain Cu as a major component, the piezoelectric ceramic layers contain a compound oxide represented by Pb(Ti, Zr)O 3 as a major component, and a metal oxide (Nb 2 O 5 , Sb 2 O 5 , Ta 2 O 5 , or WO 3 ) containing Nb, Sb, Ta, or W, which is at least one of a pentavalent metal element and a hexavalent metal element, is incorporated in the piezoelectric ceramic layers 11 such that the concentration of the metal oxide decreases with distance from the internal electrode layers 21 and 22. Thereby, even in the case where internal electrodes contain Cu as a major component, it is possible to provide a multilayer piezoelectric device which can be obtained by low-temperature firing while ensuring a sufficient piezoelectric constant. |
