| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor film deposition apparatus which can ensure good in-plane uniformity stably for a long term by preventing occurrence of internal leak in a deposition chamber due to particles produced in the deposition chamber, and to provide a semiconductor film deposition method. <P>SOLUTION: The semiconductor film deposition apparatus comprises a deposition chamber 5, a carry-in/carry-out gate 15 provided on one sidewall of the deposition chamber 5 in order to carry a substrate 2 in the deposition chamber 5 or to carry out the substrate 2 therefrom, a conveyance chamber 20 capable of being decompressed which is connected to the deposition chamber 5 via the carry-in/carry-out gate 15 in order to carry the substrate 2 in the deposition chamber 5 or to carry out the substrate 2 therefrom, a freely opening/closing gate valve 10 which can hermetically close the deposition chamber 5 by closing the carry-in/carry-out gate 15 while sandwiching a seal material 11 over the whole circumference at the peripheral part of the carry-in/carry-out gate 15 on the side surface of one sidewall on the conveyance chamber 20 side, and a trap plate 9 arranged at the carry-in/carry-out gate 15 in order to capture particles 8 produced in the deposition chamber 5. <P>COPYRIGHT: (C)2012,JPO&INPIT |
