| 摘要 |
<p>A semiconductor substrate is provided which includes a semiconductor substrate main body (62) which has an element forming layer (65) and a gettering layer (66) provided on an upper layer thereof; a device (64), each of which includes a first conductive type region, provided in the element forming layer (65); and a dielectric film (63) which is provided on an upper layer of the gettering layer (66) and which induces a second conductive type region in a surface of the gettering layer (66).
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