| 摘要 |
PURPOSE: A white-nano-light emitting diode and a method for manufacturing the same are provided to stably maintain white light emission using a nano-structure pattern in a chip manufacturing process. CONSTITUTION: An active layer is stacked on an n-type semiconductor layer. A p-type semiconductor layer is stacked on the active layer. A p-GaN layer(400) is grown on a green multi-quantum-well(MQW) layer(300). The MQW layer is grown on an n-GaN layer(200). A nano-structure pattern is formed on the n-GaN layer. A protrusion region and a non-protrusion region are formed on the n-GaN layer.
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