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发明名称
Method for forming silicon germanium layers at low temperatures for controlling stress gradient
摘要
申请公布号
EP1801067(A3)
申请公布日期
2012.05.09
申请号
EP20060026404
申请日期
2006.12.20
申请人
IMEC;AMERICAN UNIVERSITY CAIRO
发明人
SEDKY, SHERIF;WITVROUW, AN
分类号
B81C1/00
主分类号
B81C1/00
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代理人
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