| 摘要 |
<p>The objective of the present invention is to allow performing high-accuracy dark current correction regardless of layout upon an imaging element chip or a drive pattern of peripheral circuitry. In the present invention, according to an operational pattern of an imaging element, which is formed by an active pixel area, an OB portion, and an imaging element drive circuit, and, for example, a drive circuit in which a temperature difference is generated between the active pixel area and the OB portion (steps S1, S2, and S5), the blackness level (hereinafter referred to as a second blackness level) included within a detected signal of active pixels within the active pixel area on the basis of the blackness level detected by the OB pixels is obtained by correction operation processing (steps S3, S6, and S7), so that with the second blackness level corresponding to the drive pattern of the drive circuit treated as a clamp level (step S4), the clamp level is subtracted from the level of the output signal of the active pixels.</p> |
