MEMORY DEVICE, METHOD FOR MANUFACTURING THE MEMORY DEVICE, AND MEMORY SYSTEM HAVING THE SAME

摘要

PURPOSE: A memory device, a manufacturing method thereof, and a memory system including the same are provided to reduce discharge time by discharging a bit line voltage using a diode. CONSTITUTION: A memory device includes a plurality of sub cell arrays(21-1) and a switch. A plurality of sub cell arrays include a plurality of memory cells(23-1 to 23-n), a discharge line and a plurality of diodes. The plurality of memory cells are arranged in an intersection between a plurality of local bit lines and a plurality of word lines. A plurality of diodes(24) are connected between the plurality of local bit lines and the discharge line. A switch connects the discharge lien and the ground in response to a discharge enable signal.