发明名称 |
Active matrix display device |
摘要 |
In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device is provided with a bank layer (bank) along a data line (sig) and a scanning line (gate) to suppress formation of parasitic capacitance in the data line (sig), in which the bank layer (bank) surrounds a region that forms the organic semiconductive film of the thin film luminescent device by an ink-jet process. The bank layer (bank) includes a lower insulating layer formed of a thick organic material and an upper insulating layer of an organic material which is deposited on the lower insulating layer and has a smaller thickness so as to avoid contact of the organic semiconductive film with the upper insulating layer. |
申请公布号 |
US8159124(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20080046298 |
申请日期 |
2008.03.11 |
申请人 |
YUDASAKA ICHIO;SEIKO EPSON CORPORATION |
发明人 |
YUDASAKA ICHIO |
分类号 |
H01J1/62;H01J63/04;H01L27/00;H01L27/32;H01L51/00;H01L51/40 |
主分类号 |
H01J1/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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