| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a Ge-Sb-Te film which is highly controllable due to the CVD and by which a highly smooth Ge-Sb-Te film can be obtained. <P>SOLUTION: The method of forming the Ge-Sb-Te film by arranging a substrate in a processing chamber and introducing a gaseous Ge material, a gaseous Sb material, and a gaseous Te material into the processing chamber to form the Ge-Sb-Te film, which will be Ge<SB POS="POST">2</SB>Sb<SB POS="POST">2</SB>Te<SB POS="POST">5</SB>, on the substrate by the CVD, includes: the step (Step 2) of introducing the gaseous Ge material and the gaseous Sb material, or an amount of gaseous Te material small enough not to form Ge<SB POS="POST">2</SB>Sb<SB POS="POST">2</SB>Te<SB POS="POST">5</SB>in addition to them, into the processing chamber to form a precursor film containing no Te or a smaller amount of Te than Ge<SB POS="POST">2</SB>Sb<SB POS="POST">2</SB>Te<SB POS="POST">5</SB>on the substrate; and the step (Step 3) of introducing the gaseous Te material into the processing chamber and letting the precursor film absorb Te to adjust a Te concentration in the film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
