METHOD FOR MANUFACTURING A CIRCUIT

摘要

The invention relates to a method for manufacturing an integrated circuit, said method including the steps of: forming at least one dielectric layer (15) above an upper surface of a substrate (5), wherein said dielectric layer extends over an underlying surface (12), the dielectric layer (15) having an upper surface (25) and a flank (40) that extends between the upper surface (25) and the underlying surface (12); and forming an integral electrical structure (70) made of an electrically conductive material, including a structural element (75) extending over the upper surface (25) of the dielectric layer (15) and an interconnection element (80) extending from the structural element (75) along the flank (40) up to the underlying surface (12). According to one aspect of the invention, the flank (40) has a height of more than 10 µm, and the electrical structure (70) is formed by depositing electrically conductive material, while simultaneously depositing the structural element (75) on the upper surface (25) of the dielectric layer (15) and the interconnection element (80) on the flank (40).