| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that achieves low gate capacitance. <P>SOLUTION: A semiconductor device comprises: a first-conductive-type base layer; a second-conductive-type base layer provided on the first-conductive-type base layer; gate insulating films; first-conductive-type source layers selectively provided on a surface of the second-conductive-type base layer, adjacent to the gate insulating films; gate electrodes provided inside the gate insulating films in trenches; and main electrodes. The gate insulating films are provided on the side surfaces of the trenches reaching the first-conductive-type base layer from the surface of the second-conductive-type base layer. The main electrodes are provided on the surface of the second-conductive-type base layer and surfaces of the first-conductive-type source layers, and at a deeper position than the gate electrodes in the trenches and the second-conductive-type base layer. The main electrodes are electrically connected to the second-conductive-type base layer and the first-conductive-type source layers. <P>COPYRIGHT: (C)2012,JPO&INPIT |
