发明名称 |
PHOTOMASK BLANK AND MAKING METHOD, PHOTOMASK, LIGHT PATTERN EXPOSURE METHOD, AND DESIGN METHOD OF TRANSITION METAL/SILICON BASE MATERIAL FILM |
摘要 |
A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %. |
申请公布号 |
US2012064438(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113228501 |
申请日期 |
2011.09.09 |
申请人 |
YOSHIKAWA HIROKI;INAZUKI YUKIO;KOITABASHI RYUJI;KANEKO HIDEO;HARAGUCHI TAKASHI;KOJIMA YOSUKE;HIROSE TOMOHITO |
发明人 |
YOSHIKAWA HIROKI;INAZUKI YUKIO;KOITABASHI RYUJI;KANEKO HIDEO;HARAGUCHI TAKASHI;KOJIMA YOSUKE;HIROSE TOMOHITO |
分类号 |
G03F7/20;G03F1/00;H01L21/31 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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