发明名称 PHOTOMASK BLANK AND MAKING METHOD, PHOTOMASK, LIGHT PATTERN EXPOSURE METHOD, AND DESIGN METHOD OF TRANSITION METAL/SILICON BASE MATERIAL FILM
摘要 A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
申请公布号 US2012064438(A1) 申请公布日期 2012.03.15
申请号 US201113228501 申请日期 2011.09.09
申请人 YOSHIKAWA HIROKI;INAZUKI YUKIO;KOITABASHI RYUJI;KANEKO HIDEO;HARAGUCHI TAKASHI;KOJIMA YOSUKE;HIROSE TOMOHITO 发明人 YOSHIKAWA HIROKI;INAZUKI YUKIO;KOITABASHI RYUJI;KANEKO HIDEO;HARAGUCHI TAKASHI;KOJIMA YOSUKE;HIROSE TOMOHITO
分类号 G03F7/20;G03F1/00;H01L21/31 主分类号 G03F7/20
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