| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent warp and damage of a substrate due to internal stress of an insulation layer caused by annealing without increasing an additional step in a manufacturing process of a MEMS transducer. <P>SOLUTION: In order to form a contact hole reaching a first conductive layer and also to form a groove H3 after a first insulation layer, the first conductive layer, a second insulation layer and a second conductive layer are formed, the first insulation layer and the second insulation layer are etched, and thereafter annealing treatment is executed to alleviate stress of the first conductive layer or the second conductive layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
